• 专利标题:   Device e.g. graphene nanoribbons useful in high speed and low power electronics comprises substrate, and first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon has specific width.
  • 专利号:   US2013330523-A1, US9061912-B2
  • 发明人:   ZHANG Y
  • 专利权人:   UNIV CALIFORNIA
  • 国际专利分类:   C01B031/02, B82Y030/00, B82Y040/00, C01B031/04, C23C016/26
  • 专利详细信息:   US2013330523-A1 12 Dec 2013 C01B-031/02 201401 Pages: 11 English
  • 申请详细信息:   US2013330523-A1 US910327 05 Jun 2013
  • 优先权号:   US656669P, US910327

▎ 摘  要

NOVELTY - A device comprises: a substrate; and a first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon is less than 20 nanometers wide. USE - As graphene nanoribbons (claimed), useful in high speed and low power electronics. ADVANTAGE - The graphene nanoribbon fabrication method has many advantages over previous graphene nanoribbon fabrication methods such as, if the catalyst layer is scaled down to about a few angstroms thick, graphene nanoribbons with bandgaps larger than 0.5 eV or 1 eV is produced. The morphology of the catalyst layer determines the length and the position of the graphene nanoribbon. The fabrication method is compatible with numerous catalyst layer/masking layer combinations, so long as the layers are compatible with the temperatures during the fabrication method. The method is scaled to any size substrate; and compatible with current semiconductor post-processing methods. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing the device involving: depositing a catalyst layer on a substrate; depositing a masking layer on the catalyst layer; patterning the masking layer and the catalyst layer to form structures on the substrate, where a portion of the catalyst layer is exposed; and forming a graphene layer on the exposed catalyst layer by exposing the substrate to a carbon-containing gas at a temperature that thermally decomposes the gas.