▎ 摘　　要

NOVELTY - Apparatus (200) for forming graphene layer, comprises: reaction chamber (202) containing a support layer (204); heating element for heating the support layer; and a control device configured to control the formation of graphene layer on a surface of support layer by (a) introducing an organic compound gas into the chamber to provide graphene growth by causing a formation of carbon atoms on the surface, (b) reducing a rate of introduction of organic compound gas into the chamber and introducing further gas into the chamber, and repeating steps (a) and (b) at least one time. USE - The apparatus is useful for forming a graphene layer. ADVANTAGE - The apparatus provides graphene layer having reduced number of carbon atoms trapped in copper layer, thus exhibiting reduced multilayer defects in the graphene, and where the carbon atoms that have already formed part of the graphene layer are relatively stable and are only marginally etched away. DETAILED DESCRIPTION - Apparatus (200) for forming a graphene layer, comprises: a reaction chamber (202) containing a support layer (204); at least one heating element for heating the support layer; and a control device configured to control the formation of the graphene layer on a surface of the support layer by (a) during a first time period, introducing an organic compound gas into the reaction chamber to provide graphene growth by causing a formation of carbon atoms on the surface, (b) during a second time period directly after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing a further gas into the reaction chamber, where the further gas is a carbon etching gas, and repeating steps (a) and (b) at least one time. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the apparatus for forming the graphene layer. Apparatus (200) Reaction chamber (202) Support layer (204) Inlet (206) Outlet (208)