• 专利标题:   Inverted radio frequency power tube forming method, involves forming transition layer on substrate, connecting metallic contact layer with connection line, and forming graphene thin film as channel layer in radio frequency power tube.
  • 专利号:   CN102867753-A, CN102867753-B
  • 发明人:   QIAN H, WU X, LV H, WU H, XIAO K
  • 专利权人:   UNIV TSINGHUA
  • 国际专利分类:   H01L021/28, H01L021/336, H01L029/45, H01L029/78
  • 专利详细信息:   CN102867753-A 09 Jan 2013 H01L-021/336 201326 Pages: 16 Chinese
  • 申请详细信息:   CN102867753-A CN10331121 07 Sep 2012
  • 优先权号:   CN10331121

▎ 摘  要

NOVELTY - The method involves providing a substrate. A transition layer is formed on the substrate. A connecting line is formed on the transition layer, where the connecting line comprises a source electrode connected to a line region. A drain region is connected to the connection line and a gate line. An interlayer medium layer is formed on the transition layer. The interlayer medium layer is filled in the connecting line. A metallic contact layer is connected with the connection line. A graphene thin film is formed as a channel layer in an inverted radio frequency power tube. USE - Inverted radio frequency power tube forming method. ADVANTAGE - The method enables forming an inverted radio frequency power tube in an easy, stable and reliable manner with better gate control capability and small source-drain contact. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an inverted radio frequency power tube. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an inverted radio frequency power tube. '(Drawing includes non-English language text)'