• 专利标题:   Vertical graphene nanobelt used for super capacitor, comprises silicon chip, graphene nanobelt and single wall carbon nanotube.
  • 专利号:   CN104609396-A, CN104609396-B
  • 发明人:   DONG J, FAN X, GUO X, LIU B, LI C, LIU Q
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104609396-A 13 May 2015 C01B-031/04 201555 Pages: 12 Chinese
  • 申请详细信息:   CN104609396-A CN10596634 29 Oct 2014
  • 优先权号:   CN10596634

▎ 摘  要

NOVELTY - Vertical graphene nanobelt comprises silicon chip, and graphene nanobelt, where graphene is kept in a vertical by single wall carbon nanotube. USE - Vertical graphene nanobelt used for super capacitor (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nanobelt comprises ultrasonically cleaning silicon chip with methanol, acetone and isopropyl ketone, introducing dry nitrogen gas, sequentially depositing 8-12 nm thick aluminum oxide, and 0.7-1.2 nm thick iron by electron beam evaporation system; setting furnace temperature to 700-800 degrees C, total flow rate of hydrogen gas at 200 plus minus 10 sccm, acetylene at 2 plus minus 0.5 sccm, and deionized water at 200 plus minus 10 sccm, total pressure to 25 plus minus 1 Torr, and power at 30-35 W, placing prepared silicon chip parallel to 0.3-0.5 cm tungsten filament, reacting for 30 seconds, taking tungsten filament, setting power to 0, regulating air pressure to 6.4 Torr, reacting for 15 minutes; taking four parallel tungsten filament, putting into furnace at 700 degrees C, flow rate of hydrogen gas at 200 plus minus 10 sccm, methane at 0.1-0.75 sccm, and deionized water at 15 sccm, total air pressure of 25 plus minus 1 Torr, and 65-75 W, placing single-walled carbon nanotube vertical array parallel to silicon chip, and reacting for 30-120 minutes.