▎ 摘　　要

NOVELTY - The device (100) has a substrate (1) on which an interlayer insulating film (3) with contact hole (4) is formed. Catalyst metal film (6,7) is formed on a side wall of contact hole. Catalyst metal particles are formed on bottom of contact hole. Graphene (9) is placed on catalyst metal film. Carbon nano-tubes (8) are made to penetrate contact hole on catalyst metal particles. The catalyst metal cobalt (Co), nickel (Ni) and iron (Fe). Alloy film titanium (Ti), tantalum (Ta), manganese (Mn), molybdenum (Mo), vanadium (V), ruthenium (Ru) and copper (Cu). USE - Semiconductor device such as LSI and three dimension (3D) memory. ADVANTAGE - The semiconductor device includes the graphene with high mechanical strength on the side wall of the contact hole. Thus the structural stability of the contact hole can be improved and the polishing step can be stably performed. The highly-conducting interlayer wiring which is formed of the carbon nano-tubes and the graphene can be realized. Thus high current density tolerance, electric conduction property, thermal conductivity, and mechanical strength attracts can be obtained effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the semiconductor device. Substrate (1) Interlayer insulating film (3) Contact hole (4) Catalyst metal film (6,7) Carbon nano-tubes (8) Graphene (9) Semiconductor device (100)