• 专利标题:   Manufacture of graphene substrate for semiconductor chip involves electrolytically polymerizing graphene carbon source on electroconductive or semiconductor substrate and forming graphene layer.
  • 专利号:   JP2013103873-A, JP5864049-B2
  • 发明人:   ONO T, WATANABE M, KOIDE Y
  • 专利权人:   TOKYO OHKA KOGYO CO LTD, UNIV KANAGAWA, TOKYO OHKA KOGYO CO LTD, UNIV KANAGAWA
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2013103873-A 30 May 2013 C01B-031/02 201340 Pages: 9 Japanese
  • 申请详细信息:   JP2013103873-A JP250942 16 Nov 2011
  • 优先权号:   JP250942

▎ 摘  要

NOVELTY - Graphene substrate is manufactured by electrolytically polymerizing graphene carbon source on electroconductive or semiconductor substrate and forming graphene layer. USE - Manufacture of graphene substrate for semiconductor chip used for mobile telephone, digital audio-video equipment, and integrated circuit card. ADVANTAGE - A graphene substrate which has uniform graphene layer can be manufactured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene substrate which has graphene layer directly adhered to surface of electroconductive or semiconductor substrate.