▎ 摘　　要

NOVELTY - Preparing single crystal graphene film comprises providing substrate, carbon source and container, providing at least one through hole on the container, placing substrate in the container, and depositing the carbon source at least on the surface of the substrate through a chemical vapor deposition reaction to obtain single crystal graphene film. USE - The method is useful for preparing single crystal graphene film. ADVANTAGE - The method: isolates various impurities e.g. quartz slag and dust particles during the chemical vapor deposition reaction on the outside of the container, so as to avoid the above-mentioned impurities from causing impurity pollution to the obtained single crystal graphene film; improves the surface cleanliness and preparation efficiency of the obtained single crystal graphene film; obtains large-size single crystal graphene film, so that the obtained single crystal graphene film has more excellent performance; is simple in operation; does not require complicated and diverse surface pretreatments on the substrate; and realizes the industrialized preparation of the single crystal graphene film.