▎ 摘　　要

NOVELTY - The forming method involves forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of organic metal compound using hydrogen gas and ammonia gas, and heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas. The substrate is heated to a temperature at which crystal grains of metal are grown in the metal film. USE - Forming method for base film of graphene. ADVANTAGE - Eliminates the impurities of each nickel thin films and prevents the generation of blisters in the nickel film. Improves the smoothness of the metal film since the gas impurities can be prevented from being confined in the metal film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a forming apparatus for base film. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the substrate processing system used in a graphene forming method. Substrate processing system (10) Control unit (22) Process controller (23) User interface (24) Storage unit (25)