▎ 摘　　要

NOVELTY - Producing graphene, comprises (i) loading nickel particles into graphite crucible, and placing graphite crucible in sample chamber of vacuum coating machine, (ii) introducing silicon substrate in sample chamber, closing sample chamber, starting vacuum pump, and continue to next process, (iii) selecting an electron beam acceleration voltage of 10-20 kV, electron beam of 100-150 mA, heating nickel particles, evaporating, and depositing nickel film on surface of silicon substrate, and (iv) opening sample chamber, placing nickel film into sample chamber of the electron beam processing equipment, closing the sample chamber, starting the vacuum pump, selecting electron beam acceleration voltage of 10-20 kV, electron beam current of 5-10 mA and electron beam spot diameter of 5-20 mm, covering nickel film by beam spot, starting electron beam annealing, incubating for 1-60 seconds, turning off beam of electron beam, opening sample chamber to obtain graphene. USE - The method is useful for producing graphene. DETAILED DESCRIPTION - Producing graphene, comprises (i) loading nickel particles having purity of 99.99% into a graphite crucible, and placing the graphite crucible into a sample chamber of a vacuum coating machine, (ii) introducing a silicon substrate having a size of 5x 5 mm into the sample chamber, closing the sample chamber, starting a vacuum pump, and continue to next process when the vacuum in the sample chamber reaches to less than or equal to 1x 10-4 Pa, (iii) selecting an electron beam acceleration voltage of 10-20 kV, an electron beam of 100-150 mA, heating the nickel particles, evaporating, and depositing a nickel film having a thickness of 30-500 nm on surface of the silicon substrate, and (iv) opening the sample chamber, placing the nickel film into the sample chamber of the electron beam processing equipment, closing the sample chamber, starting the vacuum pump, selecting electron beam acceleration voltage of 10-20 kV, electron beam current of 5-10 mA and electron beam spot diameter of 5-20 mm, when vacuum in the sample chamber reaches to less than or equal to 5x 10-3 Pa, completely covering the nickel film by the beam spot, starting electron beam annealing when surface temperature of the nickel film reaches to 900-1400 degrees C, continue to incubate for 1-60 seconds, turning off the beam of electron beam, opening the sample chamber to obtain graphene.