• 专利标题:   Low-temperature-resistant high-resistance transparent conductive film comprises modified graphene and ammonium tetrachlorozincate.
  • 专利号:   CN110534226-A, CN110534226-B
  • 发明人:   SHI J
  • 专利权人:   SHI J, YUEQING TAIBOHENG ELECTRONIC TECHNOLOGY
  • 国际专利分类:   C01B032/184, H01B001/04, H01B013/00, H01B005/00
  • 专利详细信息:   CN110534226-A 03 Dec 2019 H01B-001/04 202003 Pages: 9 Chinese
  • 申请详细信息:   CN110534226-A CN10893169 20 Sep 2019
  • 优先权号:   CN10893169

▎ 摘  要

NOVELTY - A low-temperature-resistant high-resistance transparent conductive film comprises 30-50 pts. wt. modified graphene and 5-10 pts. wt. ammonium tetrachlorozincate. USE - Low-temperature-resistant high-resistance transparent conductive film. ADVANTAGE - The conductive film has good transmittance and high resistivity under low temperature condition. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the conductive film comprising mixing and reacting graphene oxide with dextran to obtain modified graphene blank, mixing with potassium periodate, filtering, washing, and drying to obtain modified graphene; putting pre-treated silicon wafer into polyallylamine hydrochloride, filtering, soaking to ammonium tetrachlorozincate solution, filtering, and drying to obtain modified silicon wafer; and dispersing modified graphene into water, adding the modified silicon wafer, mixing, soaking, adding sodium borohydride, stirring, filtering, drying, peeling off film, and performing index analysis.