• 专利标题:   Semiconductor wastewater treatment material comprises molybdenum disulfide/nitrogen-doped graphene and polythiophene.
  • 专利号:   CN113426468-A, CN113426468-B
  • 发明人:   JIANG D, SHAO Z, CHU F, TENG S, WANG X
  • 专利权人:   SHANDONG HUASU PHARM CO LTD
  • 国际专利分类:   B01J027/24, C02F001/30, C02F101/34, C02F101/38
  • 专利详细信息:   CN113426468-A 24 Sep 2021 B01J-027/24 202222 Chinese
  • 申请详细信息:   CN113426468-A CN10699731 23 Jun 2021
  • 优先权号:   CN10699731

▎ 摘  要

NOVELTY - Semiconductor wastewater treatment material comprises molybdenum disulfide/nitrogen-doped graphene and polythiophene. USE - Used as semiconductor wastewater treatment material. ADVANTAGE - The waste water treatment material: adjusts the light absorption wavelength relative to titanium dioxide and improves the photocatalytic reaction efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing wastewater treatment material, comprising reacting molybdenum disulfide/nitrogen-doped graphene and polythiophene by hydrothermal method to obtain final product.