▎ 摘　　要

NOVELTY - The flexible photoelectric detector has porous antireflection film (1), a flexible transparent substrate (2), a flexible transparent negative electrode (3), a buffer layer negative electrode 4), a light active layer (5), positive electrode buffer layer (6) and a positive electrode (7) that are provided sequentially from bottom to top. The porous antireflection film is prepared on the back of the flexible transparent substrate by spin coating, heat cross-linking and de-ionized liquid. The preparation material of the antireflection film is prepared by mixing polymer, ionic liquid and crosslinking agent. USE - Flexible photoelectric detector based on organic semiconductor. ADVANTAGE - The method does not need transfer printing and the technique is simple. By adjusting the proportion of the ionic liquid, the transmittance of the light is effectively enhanced and the detection rate of the photoelectric detector is improved. The mechanical robustness and physical chemical stability of the polymer surface are improved by thermal cross-linking. The service life of the anti-reflection film is prolonged. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of flexible photoelectric detector based on organic semiconductor involves cleaning the flexible transparent substrate with isopropanol and drying with nitrogen after cleaning. The back of the flexible transparent substrate is spin coated after drying treatment. A polymer is printing or sprayed. The chloroform liquid and the cross-linking agent are mixed and placed in the constant temperature box for heat curing to form cross-linked ion gel. The thermally cured cross-linked ion gel and the flexible transparent substrate are placed in the chloroform for 10 seconds to remove the ionic liquid in the polymer to form the porous anti-reflection film. The surface solvent is blown with nitrogen and dried. The transparent conductive material negative electrode is spin-coated with the surface of the flexible transparent substrate and baked for 5 minutes at 100 degrees centigrade to remove solvent. The process is repeated for three times to obtain uniform flexible transparent negative electrode. The surface of the flexible transparent negative electrode is spin coated. A negative electrode buffer layer solution is printed. A thermal annealing is performed to obtain negative electrode buffer layer. The active layer mixed solution is spin coated on negative electrode buffer layer and then performing thermal annealing treatment to obtain the light active layer. The molybdenum trioxide positive electrode buffer layer is evaporated under the condition of vacuum degree of 1 * 10-4Pa. The metal positive electrode is evaporated under the condition of the vacuum degree of 1 * 10-4Pa. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a flexible photoelectric detector based on organic semiconductor. 1Porous anti-reflection film 2Flexible transparent substrate 3Flexible transparent negative electrode 4Negative electrode layer 6Positive electrode buffer layer 7Positive electrode