• 专利标题:   Preparing graphene/indium phosphide composite electrode material, involves adding cationic surfactant hexadecyl trimethyl ammonium bromide to graphene oxide solution in alkaline environment, treating ultrasonically, and adding indium salt.
  • 专利号:   CN106532000-A
  • 发明人:   LIU S, HE X, TONG J, CHENG F
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   B82Y030/00, H01M010/0525, H01M004/36, H01M004/58, H01M004/62
  • 专利详细信息:   CN106532000-A 22 Mar 2017 H01M-004/36 201737 Pages: 6 Chinese
  • 申请详细信息:   CN106532000-A CN11081925 30 Nov 2016
  • 优先权号:   CN11081925

▎ 摘  要

NOVELTY - Preparing graphene/indium phosphide composite electrode material, involves adding cationic surfactant hexadecyl trimethyl ammonium bromide to graphene oxide solution in alkaline environment, treating ultrasonically and adding 0.25-0.75 mmole indium salt and stirring uniformly. The mixture is placed at reaction kettle and 0.2-0.6 gram phosphorus is added and hydro-thermal reaction is carried out for 8-16 hours at 120-180 degrees C. The mixture is cooled, washed and dried until the amount of the oxidized graphite alkene is 2.5-10 mmole. USE - Method for Preparing graphene/indium phosphide composite electrode material (claimed). ADVANTAGE - The method enables to prepare graphene/indium phosphide composite electrode material, is simple, safe, the prepared composite material has good electrical performance, and the current density of the material is 50 milliampere hour/gram, after 100 cycles, still can keep the 800 milliampere hour/gram specific capacity.