▎ 摘　　要

NOVELTY - Processing of photoelectric device involves providing (S10) a film layer of photoelectric device, and processing (S20) the surface of the film layer with liquid carbon dioxide and/or solid carbon dioxide. USE - Processing of photoelectric device (claimed) e.g. quantum dot LED (QLED) and organic LED (OLED). ADVANTAGE - The method uses liquid carbon dioxide and/or solid carbon dioxide to process the surface of the film layer of the photoelectric device to remove the residual organic matter and particle impurities on the surface of film layer in the preparation process, and avoids extra impurity residues, thus improving the film-forming property of the prepared film layer and improving the performance of the device. The method avoids using high temperature rapid thermal annealing to remove impurity, thus preventing adverse effects of high temperature on the photoelectric device, and improving the stability, service life and efficiency of the photoelectric device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for photoelectric device, which comprises the film layer obtained using liquid carbon dioxide and/or solid carbon dioxide to process the surface of the film layer. The film layer is at least one of a positive electrode, a hole transport layer, a hole injection layer, a light emitting layer or an electron transport layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of processing of photoelectric device. (Drawing includes non-English language text) S10Film layer providing process S20Processing process