▎ 摘　　要

NOVELTY - The method involves preparing a bottom gate bottom electrode structure of an organic light FET by using organic semiconductor material and a semiconductor layer. A silicon sheet is cleaned by using water and ethanol. The silicon sheet is put in sulfuric acid hydrogen peroxide solution for performing ultrasonic cleaning. A thin film substrate is put into a vacuum oven for drying to obtain a clean silicon sheet, where drying temperature is about 50 to 80 degree centigrade. A modified layer is plated on an electrode. USE - Fluorine graphene modified organic FET preparation method. ADVANTAGE - The method enables increasing property rate of transistor preparation process and light sensitivity effect. DETAILED DESCRIPTION - The organic semiconductor material is isopropyl silicon benzothiophene and acetylene material. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view illustrating a fluorine graphene modified organic FET preparation method.'(Drawing includes non-English language text)'