• 专利标题:   Nano energy wave energy-saving chip, is prepared by coating a surface of semiconductor chip with anion functional coating; preparation of anion functional coating comprises e.g. adding 2,6-di-tert-butylphenol, potassium hydroxide and tetrahydrofuran to reaction kettle, stirring and heating.
  • 专利号:   CN114621652-A
  • 发明人:   YIN X, YIN J
  • 专利权人:   CHANGZHOU YUANJIA ENVIRONMENTAL PROTECTI
  • 国际专利分类:   C08F220/14, C08F283/00, C08F283/10, C09D151/08, C09D007/62
  • 专利详细信息:   CN114621652-A 14 Jun 2022 C09D-151/08 202279 Chinese
  • 申请详细信息:   CN114621652-A CN10934395 16 Aug 2021
  • 优先权号:   CN10934395

▎ 摘  要

NOVELTY - Nano energy wave energy-saving chip, is claimed. The nano energy wave energy-saving chip is prepared by coating the surface of semiconductor chip with anion functional coating; the preparation of anion functional coating comprises (1) adding 2,6-di-tert-butylphenol, potassium hydroxide and tetrahydrofuran to reaction kettle, stirring and heating, adding methyl acrylate, carrying reflux reaction to prepare intermediate-1, adding intermediate-1, ethanolamine and toluene into reaction kettle, adding lithium amide, and carrying reflux reaction to prepare intermediate-2; and (2) adding epoxy resin E-44 and tetrahydrofuran into reaction kettle, stirring and refluxing, adding potassium hydroxide and introducing vinyl bromide, carrying reaction to obtain intermediate-3, adding polyethylene glycol 400, toluene diisocyanate and potassium carbonate into the reaction kettle, reacting, adding dimethylolpropionic acid, reacting, adding methylol acrylamide, continuing the reaction. USE - Used as nano energy wave energy-saving chip. ADVANTAGE - The nano energy wave energy-saving chip: has negative ion function; and solves problem that negative ion release concentration of existing nano energy wave energy-saving chip is low and effect is greatly reduced after long-term use. DETAILED DESCRIPTION - Nano energy wave energy-saving chip, is claimed. The nano energy wave energy-saving chip is prepared by coating the surface of semiconductor chip with anion functional coating; the preparation of anion functional coating comprises (1) adding 2,6-di-tert-butylphenol, potassium hydroxide and tetrahydrofuran to reaction kettle, stirring and heating, adding methyl acrylate, carrying reflux reaction to prepare intermediate-1, adding intermediate-1, ethanolamine and toluene into reaction kettle, adding lithium amide, and carrying reflux reaction to prepare intermediate-2; (2) adding epoxy resin E-44 and tetrahydrofuran into reaction kettle, stirring and refluxing, adding potassium hydroxide and introducing vinyl bromide, carrying reaction to obtain intermediate-3, adding polyethylene glycol 400, toluene diisocyanate and potassium carbonate into the reaction kettle, reacting, adding dimethylolpropionic acid, reacting, adding methylol acrylamide, continuing the reaction, adding triethylamine, and reacting to obtain intermediate-4; and (3) dispersing intermediate-4 in deionized water, adding methyl acrylate and intermediate-3, stirring, adding aqueous azobisisobutyronitrile solution, reacting to obtain the composite emulsion, stirring the composite emulsion, intermediate-2 and anion base material evenly to obtain the anion functional coating.