▎ 摘　　要

NOVELTY - A catalyst layer (7) is formed on substrate top (1, 3), and is exposed to remove a portion which opposes portion of back surface (7A) of catalyst layer among the substrates. A graphene (11) is formed on the portion of back surface. The portion of back surface is adjoined to substrate side, transfers the graphene on the substrate, and at least portion of the catalyst layer is removed, to form semiconductor element (15). USE - Manufacture of semiconductor element (claimed) used for electronic devices. ADVANTAGE - The method is simple, and enables manufacture of semiconductor element in which the graphene does not deteriorate easily. Generation of wrinkles and tear in graphene of semiconductor element is prevented. The position of transferring of the graphene is controllable with high precision. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view explaining the manufacture of the semiconductor element. Substrate top (1, 3) Intermediate layer (5) Catalyst layer (7) Back surface (7A) Hole (9) Graphene (11) Semiconductor element (15)