▎ 摘　　要

NOVELTY - The method involves forming (402) a trench in a dielectric substrate. An embedded electrode is formed (404) in the trench of the substrate. A capacitor dielectric layer is formed (406) over the first electrode by forming a high-K dielectric over the embedded electrode on a planarized surface. A layer of graphene is provided (408) over the first electrode to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed (410) on the layer of graphene. USE - Method for fabricating plate varactor e.g. graphene varactor for use as component of digital, analog and mixed-signal integrated circuit (IC) for use in end product e.g. toy and computer product. ADVANTAGE - The electrodes completely cover the graphene area, thus minimizing the contact resistance and improving the varactor's quality factor. The dipping process or transfer process for applying graphene material greatly simplifies a workflow and reduces a cost. The electrode is formed over the edges or periphery of the graphene with sufficient coverage area to provide adequate resistance when the varactor is completed. The fabricating process for varactor provides easy process flow, higher tunability and better performance. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a process for fabricating plate varactor. Step for forming trench in dielectric substrate (402) Step for forming embedded electrode in trench of substrate (404) Step for forming capacitor dielectric layer over first electrode and high-K dielectric over embedded electrode (406) Step for providing layer of graphene over dielectric layer (408) Step for forming upper electrode on layer of graphene (410)