▎ 摘　　要

NOVELTY - The ionic barristor (200) has a TMD layer (201), and a graphene layer (203) disposed on TMD layer and extending over an isolation layer adjacent to the TMD layer. An electrolyte layer (204) is disposed on the graphene layer. A source gate contact (205) is disposed on the electrolyte layer. A source contact (206) is set on the graphene layer. The electrolyte contains lithium, hexafluorophosphate. The TMD layer contains molybdenum disulfide, tungsten diselenide, or zirconium(IV) sulfide. USE - Ionic barristor for integrated TFET device. ADVANTAGE - The integration of devices results in faster switching speed than the standalone ionic barristor since logic functionality of the TFET is realized when the gate-source voltage set static. The faster switching speed is possible by improving the ohmic contact to the TMD layer using the ionic barristor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of operating an ionic barristor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of operating an ionic barristor. Ionic barristor (200) TMD layer (201) Graphene layer (203) Electrolyte layer (204) Source gate contact (205) Source contact (206)