• 专利标题:   Producing n-doped graphene films on substrate for e.g., optical device, by coating surface of substrate with doped polymer solution comprising alkali metal salt, polymer, and solvent and contacting graphene layer with coated substrate.
  • 专利号:   WO2020113171-A1
  • 发明人:   EISAMAN M, FOLKSON J, ANDRADE J
  • 专利权人:   UNIV NEW YORK STATE RES FOUND
  • 国际专利分类:   C01B032/182, C23C016/26, H01L021/205
  • 专利详细信息:   WO2020113171-A1 04 Jun 2020 C01B-032/182 202050 Pages: 38 English
  • 申请详细信息:   WO2020113171-A1 WOUS063864 29 Nov 2019
  • 优先权号:   US773665P

▎ 摘  要

NOVELTY - N-doped graphene films are produced on a substrate by (i) preparing doped polymer solution comprising alkali metal salt, polymer, and solvent; (ii) coating surface of substrate with doped polymer solution to form a coated substrate; and (iii) contacting graphene layer with the coated substrate. USE - Production of n-doped graphene films on a substrate for electronic and/or optical device, where electronic device is a flexible electronic device, preferably electrically conductive window material (claimed). ADVANTAGE - The n-doped graphene films can be characterized by a persistent and strong n-doping that is resistant to degradation. The n-doped films demonstrate high electrical conductivity and low sheet resistance without altering the optical transmission of the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for composition comprising substrate, doped polymer, and graphene.