▎ 摘　　要

NOVELTY - Preparing vertical transistor comprises transferring a graphene film to a substrate, and patterning the film graphene film on the substrate, where the substrate includes a silicon substrate gate electrode and a gate dielectric layer arranged on the gate electrode of the silicon substrate, preparing a two-dimensional oxide layer on the graphene film, and preparing a metal electrode on the film of the graphene, and connecting the two-dimensional oxide layer and the substrate to obtain the vertical transistor, where the two-dimensional oxides layer includes a single-layer two-dimensional oxides with different doping proportions or a multi-layer three-dimensional oxide with a hetero-structure. USE - The method is useful for preparing vertical transistor e.g. thermal ion vertical transistor with semiconductor channel and tunneling vertical transistor in information technology. ADVANTAGE - The vertical transistor uses the two-dimensional oxide layer as the channel layer to control the doped metal proportion, and improve the stability of the two-dimensional oxide layer to efficiently control the vertical transistor channel carrier property for achieving higher on-state current and switch ratio. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a vertical transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing vertical transistor in information technology (Drawing includes non-English language text).