▎ 摘　　要

NOVELTY - The device has a substrate, an intrinsic Gallium nitride (GaN) buffer layer, a current aperture (10), a GaN channel layer, an aluminum nitride (AlN) layer, an AlGaN barrier layer, a P-GaN cap layer and a gate electrode. A two-dimensional material layer (3), a first AlN layer (4), a second AlN layer (5) and an iron-doped GaN layer are provided from bottom to top between the substrate and intrinsic GaN buffer layer. A through hole is opened in the middle of the substrate, the two-dimensional material layer, the first AlN layer, and the second AlN layer. A metal is evaporated in the hole to form a drain electrode. A first P-type GaN layer (8) and a second P-type GaN layer with two different doping concentrations are vertically arranged to form a PN junction with the intrinsic GaN buffer layer to improve the withstand voltage characteristic between intrinsic GaN buffer layer and current aperture. USE - The device is useful in power electronic system e.g. radar and wireless communication field. ADVANTAGE - The device: adopts graphene or boron nitride with high thermal conductivity; is excellent for heat dissipation; reduces on-resistance; and improves breakdown voltage and pressure-resistant characteristics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of Van der Waals epitaxial gallium nitride high electron mobility transistor device. DESCRIPTION OF DRAWING(S) - The drawing shows a structure diagram of the Van der Waals epitaxial gallium nitride high electron mobility transistor device (Drawing includes non-English language text). 3Two-dimensional material layer 4First AlN layer 5Second AlN layer 8First P-type GaN layer 10Current aperture