• 专利标题:   Graphene interconnection line forming method, involves depositing metal catalytic layer on carbon source layer that is provided with target substrate layer, and forming graphene layer with metal catalytic layer.
  • 专利号:   CN104485310-A, CN104485310-B
  • 发明人:   KANG X, LI M, ZUO Q
  • 专利权人:   SHANGHAI INTEGRATED CIRCUIT RES DEV CE, SHANGHAI INTEGRATED CIRCUIT RES DEV CE
  • 国际专利分类:   H01L021/768
  • 专利详细信息:   CN104485310-A 01 Apr 2015 H01L-021/768 201538 Chinese
  • 申请详细信息:   CN104485310-A CN10842215 25 Dec 2014
  • 优先权号:   CN10842215

▎ 摘  要

NOVELTY - The method involves forming a carbon source layer in a target substrate. A metal catalytic layer is deposited on the carbon source layer that is provided with a target substrate layer. A graphene layer is formed with the metal catalytic layer. The target substrate is formed with a graphene interconnection line. A bag is provided with the target substrate on a device layer and a copper interconnection structure. USE - Graphene interconnection line forming method. ADVANTAGE - The method enables preventing demage of a graphene thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene interconnection line forming method. '(Drawing includes non-English language text)'