• 专利标题:   Manufacturing substrate graphene growth involves providing metal layer on substrate, and then performing atmospheric pressure chemical vapor deposition for etching gas and carbon.
  • 专利号:   KR2016044608-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/02, C01B031/04
  • 专利详细信息:   KR2016044608-A 26 Apr 2016 201634 Pages: 47 English
  • 申请详细信息:   KR2016044608-A KR133698 05 Oct 2014
  • 优先权号:   KR133698

▎ 摘  要

NOVELTY - Substrate graphene growth manufacturing involves providing metal layer on a substrate, and then performing atmospheric pressure chemical vapor deposition by supplying and etching gas and carbon-containing gas. The etching gas is supplied with carbon for developing graphene growth on the metallic layer. The formed metallic layer is removed continuously. USE - Method for manufacturing substrate graphene growth. ADVANTAGE - The method manufactures substrate graphene growth in a simple manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the substrate graphene growth. Graphene device (1001) Graphene (1002) Board (1003) Grain boundaries (1004)