• 专利标题:   Semiconductor device assembly, has thermally conductive material layer thermally conducting heat from between semiconductor devices outward in lateral direction perpendicular to vertical direction.
  • 专利号:   US2022122942-A1
  • 发明人:   QU X, CHUN H
  • 专利权人:   MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L021/56, H01L023/31, H01L023/373, H01L025/00, H01L025/065
  • 专利详细信息:   US2022122942-A1 21 Apr 2022 H01L-025/065 202239 English
  • 申请详细信息:   US2022122942-A1 US562290 27 Dec 2021
  • 优先权号:   US043685P, US562290

▎ 摘  要

NOVELTY - The assembly (100) has a semiconductor substrate disposed over another semiconductor package along a vertical direction. A layer of thermally conductive material is disposed between the semiconductor packages. The layer thermally conducts heat outward in a lateral direction perpendicular to the vertical direction from between the package and the package. The layer is directly in contact with the back side and front side of the package, and isolated from conductive interconnects disposed between and electrically connecting the two package, and the substrate. The material comprises graphene, graphite, and/or carbon nanotubes. USE - Semiconductor device assembly. ADVANTAGE - The method enables providing the semiconductor device assembly with improved thermal performance in an efficient manner. The method allows the heat dissipating structures such as lids or heat sinks to be provided over semiconductor dies to assist with heat exchange between the package and an environment in which the package is operated. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for making a semiconductor device assembly. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor device assembly. Semiconductor device assembly (100) Package substrate (101) Semiconductor die (102) Solder balls (104) Film (106)