▎ 摘　　要

NOVELTY - Preparing graphene nanoribbons loaded semiconductor three dimensional photocatalytic material comprises taking titanium dioxide precursor dissolving in hydrogen peroxide and ammonia, mixing the solution, stirring until the solution is clear yellow, adding carbon nitride, until the solution is cloudy, centrifugal washing, adding deionized water and sonicating graphene nanoribbons, stirring in the reactor, controlling the temperature, carrying out the reaction and then centrifuging, washing, drying under nitrogen atmosphere, controlling the temperature and calcining. USE - The method is useful for preparing graphene nanoribbons loaded semiconductor three dimensional photocatalytic material (claimed). DETAILED DESCRIPTION - Preparing graphene nanoribbons loaded semiconductor three dimensional photocatalytic material comprises taking titanium dioxide precursor dissolving in hydrogen peroxide and ammonia, mixing the solution, stirring until the solution is clear yellow, adding carbon nitride, until the solution is cloudy, centrifugal washing, adding deionized water and sonicating graphene nanoribbons, stirring in the reactor, controlling the temperature at 140-180 degrees C, carrying out the reaction for 16-24 hours and then centrifuging, washing, drying under nitrogen atmosphere, controlling the temperature at 400-600 degrees C and calcining for 2-5 hours.