▎ 摘　　要

NOVELTY - The method involves forming a terahertz absorbing body unit in a cross square section. A top end of the terahertz absorbing body unit is formed with a substrate layer, a dielectric layer, a lower conductive layer, a gate layer, a floating gate layer, an isolation layer and an upper conductive layer, where the floating gate layer is made of graphene and the lower conductive layer and the upper conductive layer are respectively made of polysilicon. A silicon dioxide layer is formed in a square structure. A base is fixedly made of a noble metal material, where thickness of the base is about 0.2-0.4 m. USE - Graphene-based tunable terahertz absorbing body floating gate structure manufacturing device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene-based tunable terahertz absorbing body floating gate structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene-based tunable terahertz absorbing body floating gate structure manufacturing device in partial section.