• 专利标题:   Preparation of high-concentration graphene slurry used for manufacturing high graphene content composite material, includes mixing ground and sieved silicon carbide single crystal and pure copper powder, grinding, heating, and cooling.
  • 专利号:   CN110155996-A
  • 发明人:   CHE C
  • 专利权人:   BEIJING OUMEIZHONG SCI TECHNOLOGY RES
  • 国际专利分类:   C01B032/19
  • 专利详细信息:   CN110155996-A 23 Aug 2019 C01B-032/19 201980 Pages: 6 Chinese
  • 申请详细信息:   CN110155996-A CN10259964 27 Mar 2018
  • 优先权号:   CN10259964

▎ 摘  要

NOVELTY - Preparation of high-concentration graphene slurry comprises weighing silicon carbide single crystal, grinding in ball mill, sieving, weighing pure copper powder, grinding in ball mill, sieving, mixing with sieved silicon carbide single-crystal, repeatedly grinding in ball mill, and sieving; heating in high temperature furnace in the presence of argon, and cooling furnace to room temperature and taking residual powder in the furnace to obtain enriched graphene polymer; adding dilute sulfuric acid, ultrasonic dispersing, water bath heating while continuously stirring, filtering mixed liquid, taking powder obtained, adding dilute sulfuric acid, ultrasonic dispersing, water bath heating, filtering, and washing powder with deionized water to obtain the pure graphene powder; adding to deionized water, ultrasonic dispersing, adding microporous material carrier, ultrasonic dispersing, centrifuging, and taking lower layer to obtain graphene slurry. USE - The method is for preparing high-concentration graphene slurry used for manufacturing high graphene content composite material. ADVANTAGE - The method has high production efficiency and easy to control production process, and is suitable for large scale production, storage and transport of graphene. The graphene has high purity, and three-dimensional loosely packed microstructure which is convenient for manufacturing high graphene content composite material. DETAILED DESCRIPTION - Preparation of high-concentration graphene slurry comprises weighing 20-100 mg silicon carbide single crystal, grinding in ball mill, sieving, weighing 200-500 mg pure copper powder, grinding in ball mill, sieving, mixing sieved silicon carbide single-crystal and pure copper powder together into ball mill, repeatedly grinding for 3-5 times, and sieving to obtain uniformly mixed silicon carbide/pure-copper mixed powder; heating silicon carbide/pure-copper mixed powder in high temperature furnace in the presence of argon at 1300-1500 degrees C for 2-5 hours, and cooling furnace to room temperature and taking residual powder in the furnace to obtain enriched graphene polymer; adding 500-1000 ml 5-8% dilute sulfuric acid, ultrasonic dispersing for 20-30 minutes, water bath heating for 20-30 minutes while continuously stirring, filtering mixed liquid, taking powder obtained, adding 1000 ml 5-8% dilute sulfuric acid, ultrasonic dispersing for 20-30 minutes, water bath heating for 20-30 minutes, filtering, and washing powder with deionized water for 10-30 minutes to obtain the pure graphene powder; adding to 200-500 ml deionized water, ultrasonic dispersing for 20-30 minutes, adding 200-300 mg microporous material carrier, ultrasonic dispersing for 20-30 minutes, centrifuging for 30-50 minutes at 1000-2000 r/minute, and taking lower layer to obtain graphene slurry.