▎ 摘　　要

NOVELTY - A two-dimensional van der-hua ferroelectric tunneling junction memory based on indium selenide nano-sheet comprises metal electrode, multiple layers of hexagonal boron nitride or hafnium oxide, indium-indium-selenide nanosheet, multiple layers of graphene and a target substrate. The metal electrode is deposited on the surface of one layer of the hexagonal nitride and hafnia oxide and the other layer of graphene on the graphene surface of the target substrate, where the indium indium sulfide nano sheet is partially covered with a few graphene graphene layers. The number of the metal electrodes is two. USE - The two-dimensional van der Waals ferroelectric tunneling junction memory based on alpha-indium selenide nanosheets is useful in non-volatile storage. ADVANTAGE - The junction memory has memory with good stability and high resistance value transformation through a simple and universal method, which is of great significance to the field of non-volatile memory. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for constructing two-dimensional van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheets. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the two-dimensional van der Waals ferroelectric tunnel junction memory based on alpha-indium selenide nanosheets.