▎ 摘　　要

NOVELTY - Manufacturing graphene directly on a substrate without transfer process involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer and simultaneously with the catalyst layer, forming a graphene layer between the substrates and removing the catalyst layer on the substrate. The temperature for forming the graphene layer is 150-450 degrees C. USE - Method for manufacturing graphene directly on a substrate without transfer process used in semiconductore devices. ADVANTAGE - The method is cost effective and helps in synthesis of high-quality graphene because the transfer process is not carried out and also helps in directly synthesizing graphene on a variety of substrates. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart for a method for manufacturing graphene directly on a substrate without transfer process.