• 专利标题:   Manufacturing graphene directly on a substrate without transfer process used in semiconductore devices involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer.
  • 专利号:   KR2019142018-A, KR2071663-B1
  • 发明人:   HAM M, SON M W
  • 专利权人:   GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   C01B032/186, H01L021/027, H01L021/324
  • 专利详细信息:   KR2019142018-A 26 Dec 2019 C01B-032/186 202010 Pages: 18
  • 申请详细信息:   KR2019142018-A KR069031 15 Jun 2018
  • 优先权号:   KR069031

▎ 摘  要

NOVELTY - Manufacturing graphene directly on a substrate without transfer process involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer and simultaneously with the catalyst layer, forming a graphene layer between the substrates and removing the catalyst layer on the substrate. The temperature for forming the graphene layer is 150-450 degrees C. USE - Method for manufacturing graphene directly on a substrate without transfer process used in semiconductore devices. ADVANTAGE - The method is cost effective and helps in synthesis of high-quality graphene because the transfer process is not carried out and also helps in directly synthesizing graphene on a variety of substrates. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart for a method for manufacturing graphene directly on a substrate without transfer process.