▎ 摘　　要

NOVELTY - A graphene assistant silicon chip wet processing method involves preparing suspension by adding graphene or graphene oxide powder to the solvent, subjecting to ultrasonic dispersion. The silicon chip is soaked into a mixture of ammonia and hydrogen peroxide. Silicon chip is pretreated by coating a slurry on the treated silicon surface, and drying to obtain silicon surface with uniform thickness, and with discontinuous island graphene or graphene oxide film, followed by etching wafers processed by wet chemical etching using an etching solution of nitric acid to obtain velvet surface. USE - Method for wet processing graphene assistant silicon chip that is utilized in photovoltaic cell. ADVANTAGE - The method enables wet processing graphene assistant silicon chip to facilitate the formation of light trapping structure, light reflectance of less than 20%, increasing the absorption of light, and improving the conversion efficiency of the photovoltaic cell. DETAILED DESCRIPTION - A graphene assistant silicon chip wet processing method involves preparing suspension by adding graphene or graphene oxide powder to the solvent, subjecting to ultrasonic dispersion, where the suspension graphene or graphene oxide concentration is 0.00001-100mg/ml and the solvent is water or alcohol. The silicon chip is soaked into a mixture of ammonia and hydrogen peroxide. Silicon chip is pretreated by coating a slurry on the treated silicon surface, and drying to obtain silicon surface with uniform thickness, and with discontinuous island graphene or graphene oxide film, followed by etching wafers processed by wet chemical etching using an etching solution of nitric acid to obtain velvet surface, where the etching solution comprises water, hydrogen fluoride and nitric acid at ratio of (2-3): 1: (3-3.5), reaction temperature corrosion is 8-10 degrees C for 60-90 seconds.