▎ 摘　　要

NOVELTY - Clean transferring of wafer level two-dimensional material comprises e.g. mixing polymethyl methacrylate and polymethyl methacrylate whose weight average molecular, adding organic solvent to dissolve to form polymethyl methacrylate solution, polymethyl methacrylate whose weight average molecular weight, spin coating polymethyl methacrylate solution on the two-dimensional material surface of the catalytic substrate/two-dimensional material, heating and drying to form toughness PMMA supporting layer, and combining to obtain the catalytic substrate/two-dimensional material/toughness PMMA supporting layer, etching or separating catalytic substrate/two-dimensional material/toughness PMMA support layer to remove catalytic substrate to form two-dimensional material/PMMA support layer, then transferring two-dimensional material surface of two-dimensional material/PMMA supporting layer to target substrate to form flexible PMMA supporting layer/two-dimensional material/target substrate. USE - The method is useful for clean transferring of wafer level two-dimensional material. ADVANTAGE - The method: improves toughness and thickness of PMMA support layer formed after spin coating the twodimensional material surface to solve the mechanical support problem of wafer level two-dimensional material in the transfer process; avoids transfer damage; uses ultraviolet radiation degradation method, the PMMA thick film degradation and thinning, can combines solvent to dissolve to remove the PMMA film, and realizes clean transfer of the wafer level two-dimensional material. DETAILED DESCRIPTION - Clean transferring of wafer level two-dimensional material comprises (i) mixing polymethyl methacrylate whose weight average molecular weight is greater than or equal to 1 million and polymethyl methacrylate whose weight average molecular weight is less than or equal to 1 ten thousand, adding organic solvent to dissolve to form polymethyl methacrylate solution with solid content of 3-15%, polymethyl methacrylate whose weight average molecular weight is less than 1 ten thousand is 30-60% of the mass of polymethyl methacrylate in the solution; (ii) spin coating polymethyl methacrylate solution on the two-dimensional material surface of the catalytic substrate/two-dimensional material, heating and drying to form toughness PMMA supporting layer with thickness of 0.5-2 m, and combining to obtain the catalytic substrate/two-dimensional material/toughness PMMA supporting layer; (iii) removing the catalytic substrate: etching or separating the catalytic substrate/two-dimensional material/toughness PMMA support layer to remove the catalytic substrate to form a two-dimensional material/PMMA support layer, then transferring the two-dimensional material surface of the two-dimensional material/PMMA supporting layer to the target substrate to form flexible PMMA supporting layer/two-dimensional material/target substrate; and (iv) placing the toughness PMMA supporting layer/two-dimensional material/target substrate under ultraviolet light for light irradiation degradation, then placing in ketone solvent to dissolve to remove residual toughness PMMA supporting layer.