▎ 摘　　要

NOVELTY - Transistor structure comprises: a graphene layer located on an insulating layer (12); a first metal portion (50) overlying a portion of the graphene layer (20); a second metal portion contacting and overhanging the first metal portion; a first electrode contacting a portion of the graphene layer and laterally offset from a first sidewall of the first metal portion by a lateral spacing; and a second electrode contacting another portion of the graphene layer and laterally offset from a second sidewall of the first metal portion by the lateral spacing. USE - Used as transistor structure. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the structure. Insulating layer (12) Graphene layer (20) Dielectric seed layer (30) Gate dielectric (40) First metal portion (50)