• 专利标题:   Method for preparing zinc oxide nano-wall/reduced graphene oxide heterojunction gas sensor, involves combining reduced graphene thin film in silver interdigital electrode, growing single crystalline zinc oxide nanometer wall and building.
  • 专利号:   CN105021655-A, CN105021655-B
  • 发明人:   FAN X, GUO F, LIU S, QI L, YANG B, YU L
  • 专利权人:   UNIV XIAN TECHNOLOGICAL
  • 国际专利分类:   G01N027/00
  • 专利详细信息:   CN105021655-A 04 Nov 2015 G01N-027/00 201611 Pages: 17 Chinese
  • 申请详细信息:   CN105021655-A CN10383734 03 Jul 2015
  • 优先权号:   CN10383734

▎ 摘  要

NOVELTY - A zinc oxide nano-wall/reduced graphene oxide heterojunction gas sensor preparing method involves combining reduced graphene thin film in silver interdigital electrode by vacuum suction filtration combined heat reduction process, growing single crystalline zinc oxide nanometer wall on reduction graphene thin film surface by using water solution technique and building zinc oxide nano-wall/reduced graphene oxide heterojunction in argon atmosphere under high temperature heat treatment to obtain finished product. USE - Method for preparing zinc oxide nano-wall/reduced graphene oxide heterojunction gas sensor. ADVANTAGE - The method enables preparing zinc oxide nano-wall/reduced graphene oxide heterojunction gas sensor with strong connection force, high sensitivity detection and increased electron transfer rate.