• 专利标题:   Producing graphene by forming buffer layer made of silicon oxycarbide and single layer of graphene formed on buffer layer on surface of silicon carbide substrate by heating silicon carbide substrate in atmosphere of acetylene gas and oxygen gas, and peeling single layer of graphene.
  • 专利号:   JP2022056749-A
  • 发明人:   TANIYASU Y, SASAKI K, TANAKA S, KAJIWARA T
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP, UNIV KYUSHU
  • 国际专利分类:   B32B009/00, C01B032/19, C01B032/956, H05K001/03
  • 专利详细信息:   JP2022056749-A 11 Apr 2022 C01B-032/19 202243 Pages: 8 Japanese
  • 申请详细信息:   JP2022056749-A JP164667 30 Sep 2020
  • 优先权号:   JP164667

▎ 摘  要

NOVELTY - Method for producing graphene, involves a graphene forming step of forming a 3 x 3 buffer layer made of silicon oxycarbide and a single layer of graphene formed on the 3 x 3 buffer layer on surface of silicon carbide substrate by heating silicon carbide substrate in atmosphere in which acetylene gas and oxygen gas whose supply amount is controlled are supplied, and a peeling step of peeling the graphene of the single layer from the silicon carbide substrate by separating the 3 x 3 buffer layer from the silicon carbide substrate. USE - The method is used for producing graphene, which is used for electronic device. ADVANTAGE - The method stably forms a 3 x 3 buffer layer with excellent reproducibility and easily peels graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a laminate for the production of graphene, comprising a silicon carbide substrate, a 3 x 3 buffer layer made of silicon oxycarbide formed on the surface of silicon carbide substrate, and a single layer of graphene formed on the 3 x 3 buffer layer, and an intercalation layer composed of hydrogen arranged between silicon carbide substrate and 3 x 3 buffer layer and intercalating with silicon atoms.