▎ 摘　　要

NOVELTY - Method for producing graphene, involves a graphene forming step of forming a 3 x 3 buffer layer made of silicon oxycarbide and a single layer of graphene formed on the 3 x 3 buffer layer on surface of silicon carbide substrate by heating silicon carbide substrate in atmosphere in which acetylene gas and oxygen gas whose supply amount is controlled are supplied, and a peeling step of peeling the graphene of the single layer from the silicon carbide substrate by separating the 3 x 3 buffer layer from the silicon carbide substrate. USE - The method is used for producing graphene, which is used for electronic device. ADVANTAGE - The method stably forms a 3 x 3 buffer layer with excellent reproducibility and easily peels graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a laminate for the production of graphene, comprising a silicon carbide substrate, a 3 x 3 buffer layer made of silicon oxycarbide formed on the surface of silicon carbide substrate, and a single layer of graphene formed on the 3 x 3 buffer layer, and an intercalation layer composed of hydrogen arranged between silicon carbide substrate and 3 x 3 buffer layer and intercalating with silicon atoms.