▎ 摘　　要

NOVELTY - The apparatus has a monolayer graphene film that is arranged on a portion of the substrate. A single-layer transition metal dichalcogenide (TMD) is formed only on the substrate and lateral edges of the monolayer graphene film. The substrate is made of aluminum (III) oxide, silicon dioxide, or silicon. The single-layer TMD is made of molybdenum disulfide, tungsten disulfide, molybdenum diselenide, tungsten diselenide, molybdenum telluride, tungsten ditelluride, niobium selenide or a combination. USE - Apparatus for producing transition metal dichalcogenide (TMD) transistor arrays of optically-transparent electronic device (claimed). ADVANTAGE - The full potential of atomically-thin TMD materials for electronics is ensured. The intrinsic volume and contact resistances are enhanced. The chemically and thermally stable is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing transition metal dichalcogenide (TMD) transistor arrays. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the TMD materials.