• 专利标题:   Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.
  • 专利号:   CN103255474-A
  • 发明人:   WANG C, WANG L
  • 专利权人:   UNIV NANCHANG
  • 国际专利分类:   C30B025/14, C30B029/02
  • 专利详细信息:   CN103255474-A 21 Aug 2013 C30B-025/14 201377 Pages: 5 Chinese
  • 申请详细信息:   CN103255474-A CN10145266 25 Apr 2013
  • 优先权号:   CN10145266

▎ 摘  要

NOVELTY - Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene at greater than 800 degrees C under normal pressure for 20-40 minutes and growing environmental air pressure of 1-300 Pascal for 1 minute to 2 hours in a flow field, where the organic gas includes alkanes, alkenes, alkynes and aromatic hydrocarbons such as carbon-containing gases, the metal surface comprises copper, molybdenum and other metal surfaces and the flow field comprises flow rate, flow direction and air pressure. USE - The method is useful for manufacturing large size single crystal graphene (claimed).