▎ 摘　　要

NOVELTY - The semiconductor structure (100) has a metal layer formed over a substrate (102). A dielectric layer is formed over the metal layer. An opening is formed in the dielectric layer exposing surfaces of the dielectric layer and a portion of the metal layer. A graphene barrier layer (506) is formed on the exposed surfaces of the dielectric layer. A conductive layer (704) is formed in a portion of the opening and in contact with a portion of the metal layer. A portion of the graphene barrier layer is provided between the conductive layer and the dielectric layer. USE - Semiconductor structure. ADVANTAGE - Increases production efficiency and lowers associated costs in fabrication of semiconductor structure. Maintains device reliability since barrier layer thickness is scaled down to reduce resistance increase associated with smaller contacting area. Obtains chemical stability and reliability by preventing metal diffusion or oxidation in vias or metal interconnect structure. Reduces device dimension without sacrificing device performance. Prevents formation of metal oxide in and around conductive contact in semiconductor interconnect structures. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor structure fabricating method. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of a partially-formed semiconductor interconnect structure. Semiconductor structure (100) Substrate (102) Conductive interconnection layer (103) Graphene barrier layer (506) Conductive layer (704)