▎ 摘　　要

NOVELTY - Growth method of graphene (203) involves performing chemical vapor deposition of graphene using gas containing hydrocarbon with respect to crystal substrate, forming metal catalyst crystal thin film (102), and exposing a portion of surface of the upper portion of the crystal substrate which has insulation. USE - Growth method of graphene used for semiconductor element for electronic devices e.g. direct transistor. ADVANTAGE - The method transversely enables graphene having high carrier movement, and does not require metal removal and transfer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining the growth of the graphene. Insulating crystallinity insulated substrate (101) Metal catalyst crystal thin film (102) Graphene (203)