▎ 摘　　要

NOVELTY - The transistor has a graphene layer or a silicon crystal layer located on a substrate. An inner surface of a source electrode layer is formed with a drain electrode layer. The source electrode layer and the drain electrode layer are located on the substrate. The graphene heterojunction structure layer is located between the source electrode layer and the drain electrode layer. A gate insulating layer is located between the source electrode layer and the drain electrode layer. A graphene surface of the hetero- structure layer is covered from an inner surface of a base plate where the base plate is not covered by the source electrode layer. A part of the drain electrode layer is covered with the graphene heterojunction structure layer. The gate insulating layer is fixed away from an inner surface of the substrate. USE - Thin film transistor for an electronic device (claimed). ADVANTAGE - The transistor has better electron transport capability, forms the heterogeneous structure layer by graphene layer and silicon crystal layer and obtains thin film transistor with better electrical performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a thin film transistor preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film transistor for an electronic device.