▎ 摘　　要

NOVELTY - P-type tunneling contact layer epitaxy method for UV LED involves: (S1) paving a graphene layer (A) on a surface of p-type nitride layer of UV LED; (S2) epitaxially growing an aluminum nitride layer on the surface of the graphene layer (A); (S3) using the diffusion of aluminum nitride atoms to form an aluminum nitride two-dimensional material between the graphene layer (A) and the p-type nitride layer, and performing n-type doping on the two-dimensional material; (S4) removing the graphene layer (A); (S5) paving a graphene layer (B) on the two-dimensional aluminum nitride surface; (S6) epitaxially growing a p-type doped indium gallium nitride layer on the surface of the graphene layer (B), so that indium gallium nitride atoms diffuse to the interface between the aluminum nitride layer and the graphene layer (B) to form an indium gallium nitride two-dimensional material; (S7) removing the graphene layer (B); and (S8) paving a graphene layer (C) on the indium gallium nitride surface. USE - P-type tunneling contact layer epitaxy method for UV LED. DETAILED DESCRIPTION - P-type tunneling contact layer epitaxy method for UV LED involves: (S1) paving a graphene layer (A) on a surface of p-type nitride layer of UV LED; (S2) epitaxially growing an aluminum nitride layer on the surface of the graphene layer (A); (S3) using the diffusion of aluminum nitride atoms to form an aluminum nitride two-dimensional material between the graphene layer (A) and the p-type nitride layer, and performing n-type doping on the two-dimensional material; (S4) removing the graphene layer (A); (S5) paving a graphene layer (B) on the two-dimensional aluminum nitride surface; (S6) epitaxially growing a p-type doped indium gallium nitride layer on the surface of the graphene layer (B), so that indium gallium nitride atoms diffuse to the interface between the aluminum nitride layer and the graphene layer (B) to form an indium gallium nitride two-dimensional material; (S7) removing the graphene layer (B); (S8) paving a graphene layer (C) on the two-dimensional indium gallium nitride surface; (S9) epitaxially growing an n-type doped aluminum nitride layer on the surface of the graphene layer (C), so that aluminum nitride atoms diffuse to the interface between the indium gallium nitride layer and the graphene layer (C) to form an aluminum nitride two-dimensional material; and (S10) performing steps (S5)-(S9) in multiple cycles to form an aluminum nitride/indium gallium nitride superlattice tunneling heterostructure on the surface of the p-type tunneling contact layer of the UV LED.