• 专利标题:   Method of transferring graphene film, involves uniformly coating polymethyl methacrylate (PMMA) on metal substrate, etching metal in structural layer A, and covering structural layer B on metal substrate newly grown with target graphene.
  • 专利号:   CN110156001-A
  • 发明人:   SHEN C, LI X, QING F
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C01B032/182, C01B032/194
  • 专利详细信息:   CN110156001-A 23 Aug 2019 C01B-032/194 201973 Pages: 9 Chinese
  • 申请详细信息:   CN110156001-A CN10622974 11 Jul 2019
  • 优先权号:   CN10622974

▎ 摘  要

NOVELTY - Method of transferring graphene film, involves (1) uniformly coating PMMA on a metal substrate grown with graphene by spin coating, leaving at room temperature, and heating to form a film to form a structural layer A having a PMMA/graphene/metal substrate, (2) etching the metal in the structural layer A and performing multiple cleanings to obtain a structural layer B having PMMA/graphene, (3) covering the structural layer B on a metal substrate newly grown with target graphene to form a structural layer C having a PMMA/graphene/target graphene/metal substrate, (4) etching the metal in the structural layer C and performing multiple cleanings to obtain a structural layer D having PMMA/graphene/target graphene, and (5) heating the structural layer D on the target substrate, and lifting the structural layer B from the target graphene to transfer the target graphene to the target substrate. USE - Method of transferring graphene film. ADVANTAGE - The transferred graphene film has high transfer quality, high cleanliness, excellent integrity and no organic residue.