▎ 摘　　要

NOVELTY - The selection device has a graphene layer (200) that is formed on a substrate (100). A two-dimensional insulating layer (300) is formed on the graphene layer. A first electrode (400) is formed on the two-dimensional insulating layer. The dielectric strength of the two-dimensional insulating layer is 5 MV/cm or more. The thickness of the two-dimensional insulating layer is 5 nm to 30 nm. The thickness of the graphene layer is 10 nm or less. The current flashing ratio is 1010 or more. USE - Selection device of resistive memory element (claimed). ADVANTAGE - The leakage current is reduced by providing large current blink ratio, so that the power consumption of a resistive memory element is reduced. The selection element provides the best performance. The change in current according to the voltage change of the selection element is performed quickly. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a selection device. Substrate (100) Oxide insulating layer (110) Graphene layer (200) Two-dimensional insulating layer (300) Electrode (400,500)