• 专利标题:   Preparation of single-layer graphene comprises catalyzing and growing graphene on surface of alloy substrate by using chemical vapor deposition method in hydrogen and inert atmosphere, and finishing preparing single-layer graphene.
  • 专利号:   CN102134067-A, CN102134067-B
  • 发明人:   FU L, LIU Z, DAI B
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102134067-A 27 Jul 2011 C01B-031/04 201224 Pages: 14 Chinese
  • 申请详细信息:   CN102134067-A CN10096201 18 Apr 2011
  • 优先权号:   CN10096201

▎ 摘  要

NOVELTY - Preparation of single-layer graphene comprises catalyzing and growing graphene on surface of alloy substrate by using chemical vapor deposition method in hydrogen and inert atmosphere, and finishing preparing single-layer graphene. USE - Method for preparing single-layer graphene (claimed). ADVANTAGE - The method uses two or more than two different alloy metals in alloy substrate to control process of discomposing, dispersing and precipitating for carbon source, restrains process of precipitating carbon dissolved in the metal substrate simply with high efficiency, enables graphene to grow by catalyzing on surface and obtains single-layer graphene with uniform layer distribution; and is suitable for industrial production.