▎ 摘　　要

NOVELTY - Preparation of sulfur doped graphene comprises placing phosphinidene in a plasma vapor deposition device, vacuumizing at below 5 Pa, charging sulfur-containing gas in the plasma vapor deposition device with internal pressure of 100-1000 Pa, raising to 200-1000 degrees C for 1-60 minutes, carrying out bombardment of graphene at 5-500 W for 1-360 minutes, and reducing the temperature to room temperature. USE - Method for preparing sulfur doped graphene (claimed) used in electronic communication, transportation and other fields. ADVANTAGE - The method is simple, has low device requirement, good product quality and high yield, and can prepare sulfur doped graphene having good oxidation resistance.