• 专利标题:   Preparation of sulfur doped graphene by placing phosphinidene in plasma vapor deposition device, vacuumizing, charging sulfur-containing gas in plasma vapor deposition device, and carrying out bombardment of graphene.
  • 专利号:   CN107151004-A, CN107151004-B
  • 发明人:   ZU L, CUI X, LIAN H
  • 专利权人:   BEIJING INST PETROCHEMICAL TECHNOLOGY, BEIJING INST PETROCHEMICAL TECHNOLOGY
  • 国际专利分类:   C01B025/02
  • 专利详细信息:   CN107151004-A 12 Sep 2017 C01B-025/02 201771 Pages: 6 Chinese
  • 申请详细信息:   CN107151004-A CN10494312 26 Jun 2017
  • 优先权号:   CN10494312

▎ 摘  要

NOVELTY - Preparation of sulfur doped graphene comprises placing phosphinidene in a plasma vapor deposition device, vacuumizing at below 5 Pa, charging sulfur-containing gas in the plasma vapor deposition device with internal pressure of 100-1000 Pa, raising to 200-1000 degrees C for 1-60 minutes, carrying out bombardment of graphene at 5-500 W for 1-360 minutes, and reducing the temperature to room temperature. USE - Method for preparing sulfur doped graphene (claimed) used in electronic communication, transportation and other fields. ADVANTAGE - The method is simple, has low device requirement, good product quality and high yield, and can prepare sulfur doped graphene having good oxidation resistance.