• 专利标题:   Manufacturing large scale substrate free high purity graphene polyhedral structures at industrial scale cost effectively by utilizing chemical vapor deposition.
  • 专利号:   IN201002995-I4
  • 发明人:   DEV A
  • 专利权人:   PRASAD N
  • 国际专利分类:   C01B000/00
  • 专利详细信息:   IN201002995-I4 19 Jun 2015 C01B-000/00 201546 Pages: 14 English
  • 申请详细信息:   IN201002995-I4 INCH02995 11 Dec 2010
  • 优先权号:   INCH02995

▎ 摘  要

NOVELTY - Manufacturing large scale substrate free high purity graphene polyhedral structures at industrial scale cost effectively by utilizing chemical vapor deposition is claimed. USE - The process is useful for preparing hollow, porous, multi-wall carbon nanospheres or graphene polyhedral structures. ADVANTAGE - The process provides large scale substrate free high purity graphene polyhedral structures at industrial scale cost effectively with a narrow size distribution and an average particle size of 80 nm and an average aspect ratio close to 7:5.