▎ 摘　　要

NOVELTY - Improving light emitting efficiency of LED comprises introducing an anti-reflection type doping agent thin film between a transparent electrode and a light emitting layer, improving light coupling efficiency and charge injection efficiency of the transparent electrode by the anti-reflection type doping agent thin film to improve light emitting efficiency of an LED, forming an anti-reflection type dopant film on a surface of the transparent electrode, and using surface charge transfer effect of the thin film to dope the transparent electrode to improve work function to improve charge injection efficiency of the electrode. The doping agent is inorganic matter, and/or organic matter comprising but not limited to acid, oxide, chloride, organic matter of alkali metal, and/or high molecular polymers. The transparent electrode material is inorganic matter or organic matter, comprising but not limited to graphene, carbon nanometre tube or conductive polymer. USE - The method is useful for improving light emitting efficiency of LED. ADVANTAGE - The method: improves light external coupling efficiency and charge injection efficiency of the transparent electrode, and light emitting efficiency of the LED; utilizes optical anti-reflection effect of the thin film to promote waveguide mode coupling enter the transparent electrode so as to improve light emitting rate of the LED, and surface charge transfer effect of the thin film to dope the transparent electrode so as to improve work function; improves charge injection efficiency of the electrode; avoids complex micro-nano structure with high compatibility with manufacturing technique of the LED; and provides a simple and effective technical path for developing the high performance LED. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the bottom-emitting structure of the LED.