▎ 摘　　要

NOVELTY - Method for preparing double-layer single crystal graphene, involves (a) placing carbon-containing compound and copper foil in corundum box, and placing the corundum box in vapor deposition furnace, (b) introducing argon and hydrogen to vapor deposition furnace, and heating vapor deposition furnace at high temperature of 1030-1045 degrees C, (c) maintaining the temperature of vapor deposition furnace at 1030-1045 degrees C, increasing the flux of hydrogen, and annealing copper foil, (d) introducing methane to vapor deposition furnace, reducing the flux of hydrogen, and starting the growth process of double-layer single crystal graphene on copper foil, and (e) after growing double-layer single crystal graphene, stopping introducing methane, closing the power supply of vapor deposition furnace, and naturally cooling vapor deposition furnace to room temperature under atmosphere of hydrogen and argon. USE - Method for preparing double-layer single crystal graphene. ADVANTAGE - The method optimizes the growth of double-layer graphene in simple and convenient manner, grows high-quality double-layer single-crystal graphene, and is simple and easy to control.