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  • 专利标题:   Formation of graphene nanoribbon for manufacturing transistor, involves forming phenanthrene thin film on substrate, graphene thin film on phenanthrene thin-film, and heating substrate while supplying carbon supply gas on substrate.
  • 专利号:   KR1218925-B1
  • 发明人:   CHONG Y P, SOO Y K, WOO S S
  • 专利权人:   UNIV SUNGKYUNKWAN FOUND CORP COLLABORATI
  • 国际专利分类:   B82B003/00, B82Y040/00, C01B031/02, H01L021/335
  • 专利详细信息:   KR1218925-B1 21 Jan 2013 C01B-031/02 201355 Pages: 10
  • 申请详细信息:   KR1218925-B1 KR078853 09 Aug 2011
  • 优先权号:   KR078853

▎ 摘　　要

NOVELTY - Formation of graphene nanoribbon involves forming phenanthrene thin film on substrate, graphene thin film on phenanthrene thin-film, and heating substrate while supplying carbon supply gas on the substrate. USE - Formation of graphene nanoribbon used for manufacturing transistor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of transistor.