▎ 摘　　要

NOVELTY - The transistor (100) has a source electrode (120) on a substrate (110), a drain electrode separated from the source electrode, channels between source and drain electrodes, and has hollow closed cross-sectional structure, gate insulating layers in the channels and a gate electrode insulated from the electrodes by the layers. The channel includes a two-dimensional semiconductor material including graphene, black phosphorus, phosphor, or a transition metal dichalcogenide. The metal element includes molybdenum (Mo), tungsten (W), niobium (Nb), vanadium (V), tantalum (Ta), titanium (Ti), zirconium (Zr), hydrofluoric acid (Hf), technetium (Tc), rhenium (Re), Copper (Cu), gallium (Ga), Indium (In), tin (Sn), germanium (Ge) and lead (Pb) and The chalcogen element includes sulfur (S), selenium (Se) and tellurium (Te). The insulating layer includes low-doped silicon, Silicon dioxide (SiO2), Aluminum oxide (Al2O3), Hafnium oxide (HfO2) or Silicon nitride (Si3 N4). USE - Multi-crosslinked channel field effect transistor (FET) for use in electronic device. Uses include but are not limited to memory, driving integrated circuits (ICs) and logic device. ADVANTAGE - The performance of a semiconductor depends on how much a leakage current is reduced and efficiently managed in the gate electrode and the channel. The method to overcome the short channel effect and effectively reduce a channel length has been sought. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a field effect transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a field effect transistor. Field effect transistor (100) Substrate (110) Source electrode (120) Drain electrode (130) Channel (140)